Fig. 2From: Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopyThe TEM/high-angle annular dark-field (HAADF)-scanning transmission electron microscopy (STEM) images and EDS line profile of the heat-treated TaN/Ni/Si thin-foil specimen prepared via (a) mechanical polishing and ion milling, and (b) FIB milling/EXLO, (c) The low-magnification TEM image of the TaN/Er/Si thin-foil specimen prepared via FIB milling/EXLOBack to article page