Fig. 4From: Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputteringHigh resolution (HR) TEM analysis of the top region of TaNx films grown with different nitrogen gas fractions (fN2) and ICP powers (W). (a, b) 0.05 fN2 at 100 W and 400 W, (c, d) 0.1 fN2 at 100 W and 400 W, (e, f) 0.15 fN2 at 100 W and 400 WBack to article page