Fig. 3From: Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputteringDF PTEM analyses of the top region of TaNx films grown with different nitrogen gas fractions (fN2) and ICP powers (W). (a, b) 0.05 fN2 at 100 W and 400 W, (c, d) 0.1 fN2 at 100 W and 400 W, (e, f) 0.15% fN2 at 100 W and 400 W. The position of DF reflection is represented by the red circle in the SADP in the inset of each image. The magnification of DF image for 0.05 fN2 at 100 W in (a) is different from others to see the small precipitateBack to article page