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Applied Microscopy
Fig. 5 | Applied Microscopy

Fig. 5

From: Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Fig. 5

CPD mapping of switching films using KPFM. a-b Measurements of strontium iridate-based thin films. a CPD map measured under pristine (0 V), LRS (4.5 V), and HRS (− 6 V) conditions. b CPD profile along the green dashed line in (a) (Fuentes et al. 2020). c-g Measurements of InP/ZnS quantum dot-based films. c Schematic structure of InP/ZnS quantum dot-based switching devices. d I-V curve that shows changes in switching types under UV irradiation and dark states. e-g CPD maps measured under dark (e) and UV light states (f). g CPD profile comparison between the green line in (e) and the blue line in (f) (Wang et al. 2020). Reprinted from Fuentes et al. (2020) and Wang et al. (2020) (J. Magn. Magn. Mater. 501, 166,419 and Adv. Funct. Mater. 30, 1,909,114) with Journal of Magnetism and Magnetic Materials and Advanced Functional Materials’ permission

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