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Applied Microscopy
Fig. 4 | Applied Microscopy

Fig. 4

From: Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Fig. 4

Probing HfO2 film during the switching process using EFM. a Schematic of electrostatic force microscopy (EFM) measurements of an HfO2/TiN system. b-e Electrical properties (b), topography (c), ω (d), and 2ω (e) results up to 5 V during voltage sweep. f-i Electrical property (f), topography (g), ω (h), and 2ω (i) results up to 10 V during voltage sweep. (Scale bar in the images, 4 μm). Reprinted from Yang et al. (2017) (Nat. Commun. 8:15173) with Nature Communication’s permission

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