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Fig. 3 | Applied Microscopy

Fig. 3

From: Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Fig. 3

Schematic illustrations of the set process and 3D current mapping images of conductive filaments through C-AFM depth profile analysis and I-V curves. a Single-layer resistive switching devices (left) and current mapping images of the Ta2O5-x layer (right) during the set process, scale bars: 100 nm. b I-V curve after the 1st and 30th sweeps. c Bi-layer resistive switching devices (left) and current mapping images of the TaOx and Ta2O5-x layers (right) during the set process, scale bars: 100 nm. d I-V curve after the 1st and 30th sweeps. Reprinted from Ju et al. (2017) (Nanoscale 9, 8373–8379) with Nanoscale’s permission

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