Fig. 9From: The LaserFIB: new application opportunities combining a high-performance FIB-SEM with femtosecond laser processing in an integrated second chambera Delamination due to mechanical stress of the active layer of an OLED display - the organic layer and thin-film transistor are found 300 μm below the surface of the device, with 20 s of laser milling. b Electrodes of the thin-film transistor layer of a commercial OLED device, after 40 s of very low power fine polishing with the fs-laser. c Electrodes of the thin-film transistor layer of a commercial OLED display, after FIB polishing for 10 minBack to article page