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Fig. 3 | Applied Microscopy

Fig. 3

From: Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy

Fig. 3

Results after the specimen in the trench is subjected to Ar+ ion milling. a The HAADF-STEM image and the results of the EDS analysis of the heat-treated graphene-encapsulated TaN/Ni/Si thin-foil specimen. The Si K series, Ni K series, and Ga L series EDS mapping is shown in red, green, and orange, respectively. b The HAADF-STEM image and chemical composition of the heat-treated graphene-encapsulated TaN/Er/Si thin-foil specimen

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