Fig. 4
From: Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays
(a) Simulated electron paths for a ray of 5 kV electron beam in Si (200,000 electrons). Blue lines represent collision events of electrons with Si. Red lines represent backscattered electrons. (a, bottom) Energy contour plot from 5 kV simulation with percent energy loss contours. (b) Simulated interaction bulb size at various accelerating voltages: [top] maximum depth and [bottom] maximum diameter. Inset shows the penetration depth with beam energy (95% energy contour) and corresponding curve fit. (c) Estimated EBIC efficiency of the radial junction compared to the planar PN junction control