Fig. 3
From: Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays
(a) SEM image of planar PN device with metal contact highlighted in yellow. [center top] Schematic of EBIC measurement. [center bottom] Slightly tilted SEM image of the sample, illustrating surface roughness. Corresponding EBIC scans of the planar device at (b) 5 keV, (c) 10 keV, and (d) 20 keV showing higher contrast and reduced spatial resolution with higher energy. (e) Increasing mean EBIC current calculated for Si line scans. (f-h) Plots of EBIC current along line scans shown with green lines in (b-d): (f) 5 keV, (g) 10 keV, (h) 20 keV. The green box highlights the representative sample topography. The two distinct features at 5 keV become broad and indistinguishable with higher beam energies