Fig. 1From: Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputteringMicrohardness of TaNx films deposited by ICP sputtering, where ICP power was varied from 100 to 400 W at three nitrogen gas fractions (fN2), 0.05 (black squares), 0.1 (red circles), and 0.15 (green triangles)Back to article page